The use of CMOS sensors for capturing images in the visible spectrum is extensively used. They are affordable and can be integrated within various applications, as their form factors are adaptable to suit various internet of things (IoT) devices. Nevertheless, the visible light region in the electromagnetic spectrum is very narrow and numerous industries are increasingly finding it useful to expand their sensing capabilities to a wider band of frequencies in this spectrum.
An area of particular interest is the short-wave infrared (SWIR) region (1000-2000nm). Traditional CMOS devices are effective in the visible spectrum; however, the silicon is not capable of detecting the SWIR region and alternatives are currently being assessed. The dominant technology is based on indium gallium arsenide (InGaAs), and while it is highly sensitive to these wavelength ranges, it is also costly and difficult to integrate with existing silicon-based read out integrated circuits (ROICs), which adds to the cost)
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